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Nocilis Materials offers advanced silicon epitaxy service & substrate engineering.
The growth technique is RPCVD and the epi-layers are provided on 4-, 6,- and 8-inch substrates with the following descriptions:

- P-, As- and B-doped Si and SiGeSnC layers (doping level of 1015-1019 cm-3 in Si but for Si alloys depends on the material design)

- Selective epitaxy of doped and undoped SiGeC layers on patterned substrates

- Multilayer structures (superlattices) of Si-or Ge-based materials

- Ge (unstrained) on Si

- Compressive and tensile strained SiGe layers

- Strained Si on relaxed SiGe layers

- Tensile strained Ge layers

- III-V epitaxy will start in January 2016

Substrate engineering:

- SiGe on-insolater (SGOI) on 4- and 8-inch wafers

- Ge on-insolater (GOI) on 4- and 8-inch (it is introduced in January 2016)